A snapback suppressed reverse-conducting IGBT with built-in diode by utilizing edge termination - ScienceDirect
Electronics | Free Full-Text | Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs
Article-High Risk of Latch-up Caused By Improper TVS Device Selection for USB Type-C-Amazing Microelectronic Corp. is the first professional ESD solution provider in Taiwan. For the ESD technology core, we also provide
Figure 1 from Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Semantic Scholar