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Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate - Houadef - 2021 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library
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Single-Molecule Junction Formation in Deep Eutectic Solvents with Highly Effective Gate Coupling | The Journal of Physical Chemistry C
Substrate current characterization and optimization of high voltage LDMOS transistors - ScienceDirect
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Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate - Houadef - 2021 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library
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Single-Molecule Junction Formation in Deep Eutectic Solvents with Highly Effective Gate Coupling | The Journal of Physical Chemistry C
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Effects of periodic and localized imperfections on struts on nonlinear foundations and compression sandwich panels - ScienceDirect
